Ions of different materials are accelerated in an electrical field and impacted into a solid allowing modifying the physical properties of the solid. The implantation system was recently put to rest after 30 years of operation.

General Info: Beam energy range: 20 to 200 keV (5 to 20keV optional) Implant angle: 0-15°, wafer size: 2“-4“, sample holders (up to 700°C or L-N2 cooled) Fabrication of stripes of different ion concentrations (movable x/y-shutters)

The following elements have been successfully implanted: H, He, Li, B, C, N, O, Ne, Mg, Al, Si, P, S, Cl, Ar, K, Ca, Ti, V, Cr, Fe ,Ni, Cu, Zn, Ge, Se, As, Mo, Ru, Cd, Ag, Sn, Sb, Te, Xe, Ba, W, Pb, Ce, Eu, Gd, Er, Tm, Yb