The Focused Ion Beam (FIB) device is an instrument that combines a scanning electron microscope (SEM) with a focused Ga-ion beam source. By focusing the ion beam on the sample surface, the structural properties can be locally manipulated by Ga implantation, thus also changing other properties like e.g. magnetic anisotropy. By proper programming of the beam position, periodic structures can also be etched into the sample surface.

By increasing the energy and fluence of the ion beam, the sample surface can also be completely removed and the newly uncovered area analyzed by SEM. Repeating this procedure allows for a three-dimensional reconstruction of the sample (FIB-tomography); however, the sample is destroyed in the process. The etching capability of the FIB can also be used to create thin lamellas for TEM investigation.

A Gas Inlet System (GIS) can create a local atmosphere of gas particles in the area around the beam spot without worsening the overall vacuum of the chamber. Depending on the energy of the electron beam or ion beam, the gas particles can be deposited or the etching rate increased at the position of the beam. The GIS can use Pt and SiO_x for the deposition and MgSO₄-H₂O for the etching procedure.