Rapid Thermal Annealing (RTA)

Our Rapid Thermal Processor AST SHS 10MA allows rapid thermal annealing of wafers and thin film structures at temperatures up to 1000 °C.

By heating the samples for only a few seconds using high intensity halogen lamps grown films and interfaces can be changed and defects in crystal structure can be cured. Temperature treatment under non-oxidizing atmosphere as well as rapid thermal oxidation is possible.


Picture of RTA
Main parts of RTA tube furnace