13:15 

- 

13:55

(invited)

Prof. Daniel Vollprecht, MRM Augsburg

Ressourcen für die Kristallzüchtung

13:55

- 

14:15

Dr. Sepehr Foroushani, IKZ Berlin

Heating efficiency and energy saving

potential of a model crystal growth furnace

14:15

-

14:35

Dr. Ekkehard Post, NETZSCH Gerätebau GmbH, Selb

Optimization and Characterization of

Crystalline Substances by Thermal Analysis

14:35

-

15:15

Dr. Pascal Puphal,

MPI für Festkörperphysik Stuttgart

Controlling physical ground states

of single crystals

16:00

-

16:40

(invited)

Dr. Thomas Straubinger, IKZ Berlin

Dislocation evolution in bulk aluminium

nitride crystals up to 1 inch investigated

by X-ray diffraction

16:40

-

17:00

Maik Förste, TU Bergakademie Freiberg

Growth and investigation of defect-rich

interlayers in GaN

17:00

-

17:20

Dr. Ulrich Bläß, IISB Erlangen

Considerations on the contribution of

different dislocation types and directions

on residualstress in HVPE-grown GaN

17:20 

-

17:40

Dr. Saskia Schimmel, Universität Erlangen

Transient conditions during ammonothermal

growth of GaN during the transition from

etch-back to growth conditions

8:30

 -

8:50

Dr. Amir-Abbas Haghighirad,

KIT Karlsruhe,

Crystal Growth of Pnictide Superconductors

with Novel Electronic Order and Elastic Response

8:50

-

9:30

(invited)

Prof. Anna Böhmer,

Universität Bochum

Synthesis with volatile and reactive elements:

From binary towards quaternary chalcogenides

9:30

-

10:10

(invited)

Prof. Geetha Balakrishnan,

University of Warwick

Crystal growth and investigations

of skyrmion materials

10:45 

-

11:10

Prof. Wolfram Miller, IKZ Berlin

A coupled Computing of the

Dislocation Development during

the Czochralski Growth of Germanium

11:10

-

11:40

Dr. R. Radhakrishnan Sumathi,

IKZ Berlin

Point defects and dislocations

studies in high-purity Ge crystals

11:40

-

12:00

Aravind Subramanian,

IKZ Berlin

Investigating the microstructural defects in heavily-doped

Ge ingots using X-ray imaging techniques

15:30

-

16:10

(invited)

Dr. Andreas Popp, IKZ Berlin

Epitaxial Growth of (100) oriented β-Ga₂O₃ by MOVPE

16:10

-

16:30

Dr. Holger Bitterlich,

AIM Infrarotmodule

Epitaktische Abscheidung von HgCdTe

bei AIM Infrarot-Module GmbH

16:30

-

16:50

Prof. Michael Heuken, Aixtron

MOCVD Enabling Sustainable

Semiconductor Devices

16:50

-

17:10

Dr. Birgit Kallinger, Fraunhofer IISB

Benchmarking experiment of substrate quality

including SmartSiCTM wafers by epitaxy

in a batch reactor

9:15

-

9:55

Prof. Andrey Prokofiev, TU Wien

Crystal growth of candidate materials for

topological Kondo semimetals

9:55

-

10:15

Dr. Masahiko Isobe,

MPI für Festkörperforschung, Stuttgart

Crystal growth under high pressure

10:15

-

10:35

Dr. Seunghyun Khim, MPI CPfS, Dresden

Crystal growth of locally-noncentrosymmetric

intermetallic compounds in

the CaBe₂Ge₂-type structure

10:35

-

10:55

Coffee Break

10:55 

-

11:15

Prof. Cornelius Krellner, Universität Frankfurt

Isotopically pure YbRh₂Si₂ single crystals

with 171Yb, 173Yb, and 174Yb

11:15 

-

11:35

Prof. Richard Weihrich, MRM Augsburg

Co₃Sn₂S₂ – vom Mineral X zum

Spintronic- und topologischen Supermaterial